The Role of Extra-Atomic Relaxation in Determining Si 2p Binding Energy Shifts at Silicon/Silicon Oxide Interfaces.

K. Z. Zhang, J. N. Greeley, M. M. Banaszak Holl, F. R. McFeely. J. Appl. Phys. 1997 82 2298
See: Greeley, J. Neil Zhang, Kangzhan