Silicon-Silicon Oxide Interface

  • Band alignment issues related to HfO2/SiO2/p-Si gate stacks. Journal of Applied Physics 2004 96 7485-7491.
  • Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: a combined photoemission and inverse phtotemission study. Physica Status Solidi B 2004 241 2246-2252.
  • Simulated Scanning Tunneling Microscopy Images of Three-Dimensional Clusters: H8Si8O12 on Si(100)-2×1. Phys. Rev. B 2004 70 85402
    See: Chen, YunqingSchneider, Kevin
  • The differential reactivity of octahydridosilsesquioxane on Si(100)-2×1 and Si(111)-7×7: A comparative experimental study. Ultramicroscopy 2003 97 35-45.
    See: Nicholson, KenOwens, ThomasSchneider, Kevin
  • Investigation of Hydridosilsesquioxane-Based Silicon Oxide Deposition on Si(111)-7´7. Langmuir 2002 18 6233-6241.
    See: Greeley, J. NeilLudwig, BonnieNicholson, KenOwens, ThomasSchneider, Kevin
  • Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H8Si8O12 clusters. J. Appl. Phys. 2002 91 9043-9048.
    See: Nicholson, KenZhang, Kangzhan
  • Self-limiting Chemical Vapor Deposition of an Ultra-thin Silicon Oxide Film. Thin Solid Films 2001 397 78-82.
    See: John, ChrisMcCalmont, Karla A. MillerNicholson, KenZhang, Kangzhan
  • A New Infrared and Density Functional Theory Study of Model Silicon/Silicon Oxide Interfaces. Phys. Rev. B. 2001 64 155317
    See: Nicholson, Ken
  • Determination of Spherosiloxane Cluster Bonding to Si(100)-2´1 by Scanning Tunneling Microscopy K. Phys. Rev. Lett. 2000 85 602
    See: Schneider, Kevin
  • H8Si8O12 Clusters on Si(100)-2×1 and Gold: A Comparative Infrared Spectroscopic Study. Mat. Res. Soc. Symp. Proc 1999 567 543-548.
    See: Biscotto, MarkNicholson, Ken
  • Nucleation of chemical vapor deposited silicon nitride on silicon dioxide. Appl. Phys. Lett. 1999 74 1830-1832.
    See: Litz, Kyle E.
  • Infrared Study of H10Si10O15 Chemisorbed on Si(100)-2×1. Inorg. Chem. 1998 37 6014-6017.
    See: Greeley, J. Neil
  • Surface Infrared Studies of Silicon/Silicon Oxide Interfaces Derived from Hydridosilsesquioxane Clusters. J. Am. Chem. Soc. 1998 120 7776
    See: Greeley, J. NeilMeeuwenberg, Leah
  • Extra-Atomic Relaxation and Core-Level Binding Energy Shifts at Si/SiO2 interfaces: the Effects of Cluster Size on Physical Models. J. Phys. Chem. 1998 102 3930
    See: Zhang, Kangzhan
  • An Infrared Study of H8Si8O12Cluster Adsorption on Si(100) Surfaces. J. Chem. Phys. 1998 108 8680
  • The Role of Second-Neighbor Effects in Photoemission: Are Silicon Surfaces and Interfaces Special? Appl. Phys. Lett. 1998 72 46
    See: Litz, Kyle E.Zhang, Kangzhan
  • The Role of Extra-Atomic Relaxation in Determining Si 2p Binding Energy Shifts at Silicon/Silicon Oxide Interfaces. J. Appl. Phys. 1997 82 2298
    See: Greeley, J. NeilZhang, Kangzhan
  • Chloroethane Physisorbed on Hydrogenated Si(111): A Test System for the Evaluation of Core Level XPS Assignment Rules at Si/SiO2 Interfaces. Mat. Res. Soc. Symp. Proc. 1997 446 15
    See: Zhang, Kangzhan
  • Soft X-ray Si 2p core-level spectra of H8Si8O12 physisorbed on Si(111)-H: additional experimental evidence regarding the binding energy shift of the HSiO3 fragment. Mat. Res. Soc. Symp. Proc. 1997 446 241
    See: Zhang, Kangzhan
  • A New Model Silicon/Silicon Oxide Interface Synthesized from H10Si10O15 and Si(100)-2×1. Japan. J. of Appl. Phys. 1997 36 1622
    See: Meeuwenberg, LeahZhang, Kangzhan