Silicon-Silicon Oxide Interface
-
Si 2p Core-Level Shifts at the Si(100)-SiO2Interface: An Experimental Study.
K. Z. Zhang, M. M. Banaszak Holl. J. E. Bender IV, S. Lee, F. R. McFeely.
Phys. Rev. B
1996
54
7686
-
An Inquiry Concerning the Principles of Si 2p Core-Level Photoemission Shift Assignments at the Si/SiO 2 Interface.
F. R. McFeely, K. Z. Zhang, M. M. Banaszak Holl, S. Lee, J. E. Bender.
J. Vac. Sci. Technol. B
1996
14
2824
-
Photoemission Assignments of H xSiO4-xfragments in the Si/SOxInterface Region.
Sunghee Lee , M. M. Banaszak Holl, Wei Hsiu Hung, F. R. McFeely.
Appl. Phys. Lett.
1996
68
1081
-
Synthetic Control of Solid/Solid Interfaces: Analysis of Three New Silicon/Silicon Oxide Interfaces by Soft X-ray Photoemission.
S. Lee, S. Makan, M. M. Banaszak Holl, F. R. McFeely.
J. Am. Chem. Soc.
1994
116
11819
-
Core Level Photoemission and the Structure of the Si/SiO2 Interface: a reappraisal.
M. M. Banaszak Holl, S. Lee, F. R. McFeely.
Appl. Phys. Lett.
1994
65
1097
-
The Si/SiO2Interface: New Structures and Well-Defined Model Systems.
M. M. Banaszak Holl, F. R. McFeely.
Phys. Rev. Lett.
1993
71
2441
