Silicon-Silicon Oxide Interface

• Band alignment issues related to HfO2/SiO2/p-Si gate stacks. S. Sayan, T. Emge, E. Garfunkel, X.Zhao, L. Wielunksi, R. A. Bartynski, D. Vanderbilt, J.S. Suehle, S. Suzer, and M. Banaszak-Holl. Journal of Applied Physics 2004 96 7485-7491.
• Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: a combined photoemission and inverse phtotemission study. S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, E. Garfunkel. Physica Status Solidi B 2004 241 2246-2252.
• Simulated Scanning Tunneling Microscopy Images of Three-Dimensional Clusters: H8Si8O12 on Si(100)-2×1. Y. Chen, K. S. Schneider, B. G. Orr, M. M. Banaszak Holl. Phys. Rev. B 2004 70 85402
  See: Chen, YunqingSchneider, Kevin
• The differential reactivity of octahydridosilsesquioxane on Si(100)-2×1 and Si(111)-7×7: A comparative experimental study. K. S. Schneider, K. T. Nicholson, T. M. Owens, B.G. Orr, M. M. Banaszak Holl. Ultramicroscopy 2003 97 35-45.
  See: Nicholson, KenOwens, ThomasSchneider, Kevin
• Investigation of Hydridosilsesquioxane-Based Silicon Oxide Deposition on Si(111)-7´7. K.S. Schneider, T. M. Owens, K. T. Nicholson, B. J. Ludwig, J. N. Greeley, B. G. Orr, M. M. Banaszak Holl. Langmuir 2002 18 6233-6241.
  See: Greeley, J. NeilLudwig, BonnieNicholson, KenOwens, ThomasSchneider, Kevin
• Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H8Si8O12 clusters. K. T. Nicholson, K. Z. Zhang, M. M. Banaszak Holl, and F. R. McFeely. J. Appl. Phys. 2002 91 9043-9048.
  See: Nicholson, KenZhang, Kangzhan
• Self-limiting Chemical Vapor Deposition of an Ultra-thin Silicon Oxide Film. K. A. Miller, C. John, K. Z. Zhang, K. T. Nicholson, F. R. McFeely, and M. M. Banaszak Holl. Thin Solid Films 2001 397 78-82.
  See: John, ChrisMcCalmont, Karla A. MillerNicholson, KenZhang, Kangzhan
• A New Infrared and Density Functional Theory Study of Model Silicon/Silicon Oxide Interfaces. K. T. Nicholson and M. M. Banaszak Holl. Phys. Rev. B. 2001 64 155317
  See: Nicholson, Ken
• Determination of Spherosiloxane Cluster Bonding to Si(100)-2´1 by Scanning Tunneling Microscopy K. S. Schneider, Z. Zhang, M. M. Banaszak Holl, B. G. Orr U. C. Pernisz. Phys. Rev. Lett. 2000 85 602
  See: Schneider, Kevin
• H8Si8O12 Clusters on Si(100)-2×1 and Gold: A Comparative Infrared Spectroscopic Study. K. T. Nicholson, M. A. Biscotto, M. M. Banaszak Holl. Mat. Res. Soc. Symp. Proc 1999 567 543-548.
  See: Biscotto, MarkNicholson, Ken
• Nucleation of chemical vapor deposited silicon nitride on silicon dioxide. M. Copel, P. R. Varekamp, D. W. Kisker, F. R. McFeely, K. E. Litz, M. M. Banaszak Holl. Appl. Phys. Lett. 1999 74 1830-1832.
  See: Litz, Kyle E.
• Infrared Study of H10Si10O15 Chemisorbed on Si(100)-2×1. J. N. Greeley, M. M. Banaszak Holl. Inorg. Chem. 1998 37 6014-6017.
  See: Greeley, J. Neil
• Surface Infrared Studies of Silicon/Silicon Oxide Interfaces Derived from Hydridosilsesquioxane Clusters. J. N. Greeley, L. M. Meeuwenberg, M. M. Banaszak Holl. J. Am. Chem. Soc. 1998 120 7776
  See: Greeley, J. NeilMeeuwenberg, Leah
• Extra-Atomic Relaxation and Core-Level Binding Energy Shifts at Si/SiO2 interfaces: the Effects of Cluster Size on Physical Models. K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely. J. Phys. Chem. 1998 102 3930
  See: Zhang, Kangzhan
• An Infrared Study of H8Si8O12Cluster Adsorption on Si(100) Surfaces. J. Eng, K. Ragavachari, L. M. Struck, Y. J. Chabal, B. E. Bent, M. M. Banaszak Holl, F. R. McFeely, A. M. Michaels, G. W. Flynn, S. B. Christman, E. E. Chaban, G. P. Williams, K. Radermacher, S. Mantl. J. Chem. Phys. 1998 108 8680
• The Role of Second-Neighbor Effects in Photoemission: Are Silicon Surfaces and Interfaces Special? Z. Zhang, K. E. Litz, M. M. Banaszak Holl, F. R. McFeely. Appl. Phys. Lett. 1998 72 46
  See: Litz, Kyle E.Zhang, Kangzhan
• The Role of Extra-Atomic Relaxation in Determining Si 2p Binding Energy Shifts at Silicon/Silicon Oxide Interfaces. K. Z. Zhang, J. N. Greeley, M. M. Banaszak Holl, F. R. McFeely. J. Appl. Phys. 1997 82 2298
  See: Greeley, J. NeilZhang, Kangzhan
• Chloroethane Physisorbed on Hydrogenated Si(111): A Test System for the Evaluation of Core Level XPS Assignment Rules at Si/SiO2 Interfaces. F. R. McFeely, K. Z. Zhang, M. M. Banaszak Holl. Mat. Res. Soc. Symp. Proc. 1997 446 15
  See: Zhang, Kangzhan
• Soft X-ray Si 2p core-level spectra of H8Si8O12 physisorbed on Si(111)-H: additional experimental evidence regarding the binding energy shift of the HSiO3 fragment. K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely. Mat. Res. Soc. Symp. Proc. 1997 446 241
  See: Zhang, Kangzhan
• A New Model Silicon/Silicon Oxide Interface Synthesized from H10Si10O15 and Si(100)-2×1. K. Z. Zhang, L. M. Meeuwenberg, M. M. Banaszak Holl, F. R. McFeely. Japan. J. of Appl. Phys. 1997 36 1622
  See: Meeuwenberg, LeahZhang, Kangzhan